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Andrew Joseph O'Connor
Cory D. Cress
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
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01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
Matthew Russell Halstead