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From density functional theory to defect level in silicon: Does the “band gap problem” matter?
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01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
Multiphase Gallium Nitride Nanowires and Nanocircuits
04 Feb 2008 | | Contributor(s):: Virginia M. Ayres
Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Orientation relation-ships within the...