Tags: random telegraph noise

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  1. SCALE Random Telegraph Noise and Radiation Reponse of 80nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide

    02 Jan 2024 | | Contributor(s):: Isabella Wynocker

  2. SCALE Gathering Essential Data for Cryogenic PDK Advancement and Supporting the Characterization of 90 nm Transistors

    19 Sep 2023 | | Contributor(s):: Jayden Chen

  3. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    22 May 2019 | Compact Models | Contributor(s):

    By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1

    Università di Modena e Reggio Emilia

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

    https://nanohub.org/publications/289/?v=1

  4. TrapSimulator

    28 Sep 2016 | | Contributor(s):: Ricardo Carvalho de Melos

    A RTN behavior Simulation Tool

  5. On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects

    17 Feb 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes

    IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....

  6. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    28 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  7. Atomistic Simulations of Reliability

    01 Jul 2010 | | Contributor(s):: Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...

  8. Research Within Vasileska Group

    28 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.