Tags: random telegraph noise

Online Presentations (1-3 of 3)

  1. On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects

    09 Mar 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes

    IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....

  2. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  3. Research Within Vasileska Group

    29 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.