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On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
09 Mar 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
Atomistic Simulations of Reliability
06 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
Research Within Vasileska Group
29 Jun 2010 | | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.