Tags: random telegraph noise

All Categories (1-4 of 4)

  1. Atomistic Simulations of Reliability

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...

    http://nanohub.org/resources/9253

  2. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Pre-existing vs. stress-induced traps Voltage-shift in pre-existing bulk/interface traps Random Telegraph Noise, 1/f noise Conclusion

    http://nanohub.org/resources/16609

  3. On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects

    09 Mar 2016 | Online Presentations | Contributor(s): Yannick Wimmer, Wolfgang Goes

    IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature...

    http://nanohub.org/resources/23615

  4. Research Within Vasileska Group

    29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.

    http://nanohub.org/resources/9235