Applicability of diffusion
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Modern mosfet's have oxide thickness of the order of 2nm or less. How diffusion can be applicable when particles can only hop only a few times?
Roberto de Avillez
Frederick R Phelan Jr.
Essential Aspects of Negative Bias Temperature Instability (NBTI)
01 May 2011 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping...
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
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23 Dec 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
16 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....