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Tags: Reaction-Diffusion Model

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  1. Frederick R Phelan Jr.

    http://nanohub.org/members/82987

  2. Essential Aspects of Negative Bias Temperature Instability (NBTI)

    01 May 2011 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam

    We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect...

    http://nanohub.org/resources/11198

  3. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

    23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

    http://nanohub.org/resources/6067

  4. On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

    30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand...

    http://nanohub.org/resources/8023

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