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Tags: reliability

Resources (1-20 of 97)

  1. A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

    16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam

    In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level. Sourabh Dongaonkar is with...

    http://nanohub.org/resources/11841

  2. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5908

  3. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    http://nanohub.org/resources/5861

  4. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

    http://nanohub.org/resources/16668

  5. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16787

  6. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Review: Temperature activation & NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation...

    http://nanohub.org/resources/16774

  7. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...

    http://nanohub.org/resources/16786

  8. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    http://nanohub.org/resources/16789

  9. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation...

    http://nanohub.org/resources/16790

  10. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    http://nanohub.org/resources/16887

  11. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

  12. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16895

  13. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16896

  14. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    http://nanohub.org/resources/16897

  15. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    http://nanohub.org/resources/16919

  16. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    http://nanohub.org/resources/16933

  17. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such...

    http://nanohub.org/resources/17014

  18. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  19. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16965

  20. ECE 695A Lecture 17R: Review Questions

    01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation? Why do people like to use C-V techniques? What method would you use for HCI...

    http://nanohub.org/resources/17155

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