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ECE 695A Lecture 3: Reliability as a Threshold Problem
17 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Reliability as a Threshold Problem: Empirical vs. Physical Models‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distributionFour elements of Physical ReliabilityConclusions
ECE 695A Lecture 4: Structures and Defects in Crystals
Outline:Background informationDefect-free crystal structuresDefects in crystalsConclusions
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Amorphous vs. crystalline materialsDefect-free amorphous materialOrigin of defects (Maxwell’s relation)Conclusions
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
06 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
ECE 695A Reliability Physics of Nanotransistors
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
out of 5 stars
13 Mar 2009 | | Contributor(s):: Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive techniques for uncertainty quantification due to their abilities to produce functional representations of stochastic variability and to achieve exponential convergence rates in statistics of...
Failures in Photovoltaic Modules
21 Apr 2015 | | Contributor(s):: Peter Bermel
In this talk, I will discuss some of the major sources of performance degradation for common glass-encapsulated PV modules, including crystalline silicon and thin films. The greatest reliability challenges have occurred in the latter, with recent studies showing that thin-film modules operating...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | | Contributor(s):: Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered...
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | | Contributor(s):: Muhammad A. Alam
Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions
Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
Lecture 2: Threshold, Islands, and Fractals