Tags: reliability

Resources (81-100 of 100)

  1. Lecture 3: Electrical Conduction in Percolative Systems

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  2. Lecture 4: Stick Percolation and Nanonet Electronics

    26 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions

  3. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

  4. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

  5. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  6. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  7. Long term Aging of Autonomous STructures (LAAST) Seminar Series

    07 Apr 2015 | | Contributor(s):: Ali Shakouri

    The Long term Aging of Autonomous STructures (LAAST) seminar series focuses on reliability and aging of devices for energy conversion, information processing or sensing.

  8. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  9. Nanostructured Electronic Devices: Percolation and Reliability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  11. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    06 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  12. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    26 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  13. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  14. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  15. PRISM Seminar Series

    05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan

    Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...

  16. Reliability Physics of Nanoscale Transistors

    27 Nov 2007 | | Contributor(s):: Muhammad A. Alam

    This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.

  17. The Challenges of Micro-System Product Development

    05 Jun 2009 | | Contributor(s):: James J. Allen

    This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.

  18. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | | Contributor(s):: Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...

  19. Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET

    11 Jan 2016 | | Contributor(s):: Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small transistors. Moreover, nanoscale transistors degrade due to NBTI and HCI at vastly different...

  20. Verification and Validation in Simulations of Complex Engineered Systems

    03 Jan 2012 | | Contributor(s):: Robert Moser

    Computational simulation is a ubiquitous tool in engineering. Further, the explosion of computational capabilities over the last several decades has resulted in the use of computational models of unprecedented complexity to make critical design and operation decisions. One potential benefit...