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ECE 695A Lecture 27R: Review Questions
29 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Spatial vs. Temporal correlation
Theory of correlated Dielectric Breakdown
Excess leakage as a signature of correlated BD
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Position and time correlation of BD spot
How to determine the position of the BD Spot
Position correlation in BD spots
Why is localization so weak?
ECE 695A Lecture 26R: Review Questions
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Explain why percolation resistance is area independent?
Why is the physical origin of the distribution of percolation resistance?
How would the ratio of hard and soft...
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Observations: Failure times are statistically distributed
Models of Failure Distribution: Extrinsic vs. percolation
Percolation theory of multiple Breakdown
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Oxide breakdowns need not be catastrophic
Observations about soft vs. hard breakdown
A simple model for soft/hard breakdown
Interpretation of experiments
ECE 695A Lecture 23R: Review Questions
19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 22R: Review Questions
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the name of the failure distribution that we expect for thin oxides?
For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
What is DBIE? When...
ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Basic features of gate dielectric breakdown
Physical characterization of breakdown spot
Time-dependent defect generation
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?
What is the relationship between Gauss and Tesla as units...
ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Importance of measuring interface damage
Electronic Spin Resonance ( A quick review)
Spin Dependent Recombination
Electrically detected spin-resonance and noise-...
ECE 695A Lecture 17R: Review Questions
What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?
Why do people like to use C-V techniques? What method would you use for HCI...
ECE 695A Lecture 18R: Review Questions
Between DCIV and CP methods, which one is easier and why?
In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?
What are the...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Recall: Properties of Interface Defects
Flux-based method 1: Direct Current-Voltage method
Flux-based method 2: Charge pumping method
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...