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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
A Blind Fish in a River with a Waterfall
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31 Jul 2014 | Tools | Contributor(s): Muhammad Alam, Sajia Sadeque
Prototype for a reliability problem defined as Stochastic Process with a Threshold
A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.
Sourabh Dongaonkar is with...
ECE 606 Lecture 39: Reliability of MOSFET
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 11R: Review Questions
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
ECE 695A Lecture 12: Field Dependence of NBTI
Background: Field dependent degradation
Components of field-dependent dissociation:
Voltage acceleration factors
ECE 695A Lecture 12R: Review Questions
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Background and features of HCI Degradation
Origin of Hot carriers
Theory of Si-H Bond Dissociation
Theory of Si-O Bond...
ECE 695A Lecture 13R: Review Questions
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 14a: Voltage Dependent HCI I
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
What are the three methods of...
ECE 695A Lecture 15: Off-state HCI Degradation
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...
ECE 695A Lecture 16: Temperature Dependence of HCI
Empirical observations regarding HCI
Theory of bond dissociation: MVE vs. RRK
Hot carrier dissociation of SiH bonds
Hot carrier dissociation of SiO bonds