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  1. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

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    22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on …

    https://nanohub.org/resources/7113

  2. A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

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    16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam

    In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level. Sourabh Dongaonkar is with School …

    https://nanohub.org/resources/11841

  3. ECE 606 Lecture 39: Reliability of MOSFET

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5908

  4. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

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    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    https://nanohub.org/resources/5861

  5. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

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    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

    https://nanohub.org/resources/16668

  6. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    …

    https://nanohub.org/resources/16787

  7. ECE 695A Lecture 11: Temperature Dependence of NBTI

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    07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Review: Temperature activation NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation energy Conclusion

    https://nanohub.org/resources/16774

  8. ECE 695A Lecture 11R: Review Questions

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support …

    https://nanohub.org/resources/16786

  9. ECE 695A Lecture 12: Field Dependence of NBTI

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    https://nanohub.org/resources/16789

  10. ECE 695A Lecture 12R: Review Questions

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation process …

    https://nanohub.org/resources/16790

  11. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond Dissociation Conclusions

    https://nanohub.org/resources/16887

  12. ECE 695A Lecture 13R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …

    https://nanohub.org/resources/16888

  13. ECE 695A Lecture 14a: Voltage Dependent HCI I

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

    https://nanohub.org/resources/16895

  14. ECE 695A Lecture 14b: Voltage Dependent HCI II

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

    https://nanohub.org/resources/16896

  15. ECE 695A Lecture 14R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of HCI …

    https://nanohub.org/resources/16897

  16. ECE 695A Lecture 15: Off-state HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    https://nanohub.org/resources/16919

  17. ECE 695A Lecture 15R: Review Questions

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    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. …

    https://nanohub.org/resources/16933

  18. ECE 695A Lecture 16: Review Questions

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    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such a …

    https://nanohub.org/resources/17014

  19. ECE 695A Lecture 16: Temperature Dependence of HCI

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    https://nanohub.org/resources/16920

  20. ECE 695A Lecture 17: Subtheshold and Idlin Methods

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    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    …

    https://nanohub.org/resources/16965

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