2009 NCN@Purdue Summer School: Electronics from the Bottom Up

22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on …

https://nanohub.org/resources/7113

A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam

In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level. Sourabh Dongaonkar is with School …

https://nanohub.org/resources/11841

ECE 606 Lecture 39: Reliability of MOSFET

28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5908

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Guest lecturer: Muhammad A. Alam.

https://nanohub.org/resources/5861

ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

https://nanohub.org/resources/16668

ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

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https://nanohub.org/resources/16787

ECE 695A Lecture 11: Temperature Dependence of NBTI

07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Review: Temperature activation NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation energy Conclusion

https://nanohub.org/resources/16774

ECE 695A Lecture 11R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support …

https://nanohub.org/resources/16786

ECE 695A Lecture 12: Field Dependence of NBTI

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

https://nanohub.org/resources/16789

ECE 695A Lecture 12R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation process …

https://nanohub.org/resources/16790

ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond Dissociation Conclusions

https://nanohub.org/resources/16887

ECE 695A Lecture 13R: Review Questions

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …

https://nanohub.org/resources/16888

ECE 695A Lecture 14a: Voltage Dependent HCI I

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

https://nanohub.org/resources/16895

ECE 695A Lecture 14b: Voltage Dependent HCI II

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

https://nanohub.org/resources/16896

ECE 695A Lecture 14R: Review Questions

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of HCI …

https://nanohub.org/resources/16897

ECE 695A Lecture 15: Off-state HCI Degradation

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

https://nanohub.org/resources/16919

ECE 695A Lecture 15R: Review Questions

20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. …

https://nanohub.org/resources/16933

ECE 695A Lecture 16: Review Questions

22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such a …

https://nanohub.org/resources/17014

ECE 695A Lecture 16: Temperature Dependence of HCI

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

https://nanohub.org/resources/16920