Tags: reliability

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  1. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  2. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion

  3. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

  4. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  5. ECE 695A Lecture 6: Defects in the Bulk and at Interfaces

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions

  6. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  7. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...

  8. ECE 695A Lecture 5: Amorphous Material/Interfaces

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Amorphous vs. crystalline materialsDefect-free amorphous materialOrigin of defects (Maxwell’s relation)Conclusions

  9. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  10. ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Supplemental information for Lecture 7: Trapping in Pre-existing Traps

  11. ECE 695A Lecture 7R: Review Questions

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...

  12. ECE 695A Lecture 3: Reliability as a Threshold Problem

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Reliability as a Threshold Problem: Empirical vs. Physical Models‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distributionFour elements of Physical ReliabilityConclusions

  13. ECE 695A Lecture 4: Structures and Defects in Crystals

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background informationDefect-free crystal structuresDefects in crystalsConclusions

  14. ECE 695A Reliability Physics of Nanotransistors

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.

  15. ECE 695A Lecture 2: A Brief History of Reliability and Types of Reliability Models

    16 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Reliability as a General PhenomenaA Brief History of ReliabilityApproaches to Reliability PhysicsConclusions

  16. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    11 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions

  17. In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation

    06 Jun 2012 | | Contributor(s):: Muhammad Alam

    In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered...

  18. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  19. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  20. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...