Tags: reliability

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  1. ECE 695A Lecture 29R: Review Questions

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Mention a few differences between thick and thin oxide breakdown.Is breakdown in thick oxides contact dominated? Can I use AHI theory here?How does the Paschen’s cascade initiate?What does it mean to have a fractal dimension of 1.7 for 2D breakdown? Why does the number suggest...

  2. ECE 695A Lecture 29A: Appendix - Dimension of a Surface

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

  3. ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node

  4. ECE 695A Lecture 29: Breakdown of Thick Dielectrics

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions 

  5. ECE 695A Lecture 27: Correlated TDDB in Off-State HCI

    29 Mar 2013 | | Contributor(s):: Muhammad Alam

  6. ECE 695A Lecture 27R: Review Questions

    29 Mar 2013 | | Contributor(s):: Muhammad Alam

  7. ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions

  8. ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions

  9. ECE 695A Lecture 26R: Review Questions

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

  10. ECE 695A Lecture 25R: Review Questions

    27 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...

  11. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

  12. ECE 695A Lecture 24R: Review Questions

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

  13. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions

  14. ECE 695A Lecture 23R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  15. ECE 695A Lecture 22R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  16. ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  17. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  18. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions

  19. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

  20. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...