Tags: reliability

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  1. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  2. Verification and Validation in Simulations of Complex Engineered Systems

    03 Jan 2012 | | Contributor(s):: Robert Moser

    Computational simulation is a ubiquitous tool in engineering. Further, the explosion of computational capabilities over the last several decades has resulted in the use of computational models of unprecedented complexity to make critical design and operation decisions. One potential benefit...

  3. Jeremy M Gernand

    Jeremy Gernand is currently an Assistant Professor of Industrial Health and Safety at Penn State University. He is currently pursuing research related to the occupational hazards of exposure to...

    http://nanohub.org/members/61288

  4. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | | Contributor(s):: Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...

  5. A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

    16 Aug 2011 | | Contributor(s):: Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam

    In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, INKarthik Y and Souvik...

  6. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  7. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  8. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  9. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  10. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

  11. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

  12. Lecture 4: Stick Percolation and Nanonet Electronics

    26 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions

  13. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  14. Lecture 1: Percolation and Reliability of Electronic Devices

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  15. Lecture 2: Threshold, Islands, and Fractals

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  16. Lecture 3: Electrical Conduction in Percolative Systems

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  17. Nanostructured Electronic Devices: Percolation and Reliability

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  18. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    http://nanohub.org/events/details/231

  19. The Challenges of Micro-System Product Development

    05 Jun 2009 | | Contributor(s):: James J. Allen

    This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.

  20. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam