Tags: resonant tunneling diodes

Description

Resonant tunneling diode (RTD) is a diode with a resonant tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.

Learn more about quantum dots from the many resources on this site, listed below. More information on RTD can be found here.

Resources (1-20 of 30)

  1. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    18 Jan 2011 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  2. ABACUS Bandstructure Models (Spring 2022)

    05 May 2022 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....

  3. ABACUS Bandstructure Models (Winter 2021)

    21 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...

  4. ABACUS Tool Suite and Bandstructure and Band Models (Fall 2023)

    22 Aug 2023 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers....

  5. Additional Tutorials on Selected Topics in Nanotechnology

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja

    Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

  6. Analytical and Numerical Solution of the Double Barrier Problem

    28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

  7. Comparison of PCPBT Lab and Periodic Potential Lab

    10 Aug 2009 | | Contributor(s):: Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely two different sets of tools and validate the obtained results. In this presentation we provide...

  8. Exercise: Resonant Tunneling Diode

    13 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This is an exercise for resonant tunneling diode.

  9. Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

    This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a quasi bound state, and the bound state can be related to a simple particle in a box calculation.

  10. Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically spaced 20-100nm away from the central double barrier structure.

  11. Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete quasi bound states.

  12. Nanoelectronic Modeling Lecture 18: Introduction to RTDs - Quantum Charge Self-Consistency (Hartree)

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    In this semi-classical charge and potential model the quantum mechanical simulation is performed once and the quantum mechanical charge is in general not identical to the semi-classical charge.

  13. Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this set-up we expect that the tunneling rate into the RTD from the emitter is faster than the tunneling rate...

  14. Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF

    09 Mar 2010 | | Contributor(s):: Gerhard Klimeck

    Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi potential model.

  15. Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF

    09 Mar 2010 | | Contributor(s):: Gerhard Klimeck

    Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage characteristics, and resonance energies. Also demonstrated is a RTD simulation using a Thomas-Fermi...

  16. Nanoelectronic Modeling: Exercises 1-3 - Barrier Structures, RTDs, and Quantum Dots

    27 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    Exercises:Barrier StructuresUses: Piece-Wise Constant Potential Barrier ToolResonant Tunneling DiodesUses: Resonant Tunneling Diode Simulation with NEGF • Hartree calculation • Thomas Fermi potentialQuantum DotsUses: Quantum Dot Lab • pyramidal dot

  17. Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices

    25 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to...

  18. Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors

    07 Mar 2008 | | Contributor(s):: Gerhard Klimeck

    Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...

  19. Nanotechnology Animation Gallery

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also...

  20. PCPBT: Problem Assignment for Asymmetric Barriers

    24 Jun 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This example demonstrates to the students that for non-symmetric barriers which arise due to the imperfection of the molecular beam epitaxy process there is a reduction in the transmission coefficient and therefore current.