
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013   Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013   Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011   Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

Surface scattering: Made simple
03 Sep 2010   Contributor(s):: Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008   Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008   Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and electronphonon interactions are important. We concentrate here on the most developed vertical quantum device,...