Scattering is a general physical process where some forms of radiation, such as light, sound, or moving particles, are forced to deviate from a straight trajectory by one or more localized non-uniformities in the medium through which they pass. In conventional use, this also includes deviation of reflected radiation from the angle predicted by the law of reflection. Reflections that undergo scattering are often called diffuse reflections and unscattered reflections are called specular(mirror-like) reflections.
Learn more about quantum dots from the many resources on this site, listed below. More information on Scattering can be found here.
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
07 Jul 2010 | | Contributor(s):: Gerhard Klimeck
(quantitative RTD modeling at room temperature)
Nanoelectronic Modeling Lecture 26: NEMO1D -
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness...
28 May 2008 | | Contributor(s):: Feifei Lian, Feifei Lian, Feifei Lian
This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.
Nanoscale Transistors Lecture 10: Scattering Model
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
Nanoscale Transistors Lecture 9: Scattering and Transmission
Mar 04 2009
NCN@Illiinois Seminar: Silicon-Interface Scattering in Carbon Nanotube Transistors
Notes on Scattering and Mobility in 1D, 2D, and 3D
03 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in non-confined ones.
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
12 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
Surface scattering: Made simple
03 Sep 2010 | | Contributor(s):: Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.
Tutorial 2: A Bottom-Up View of Heat Transfer in Nanomaterials
23 Mar 2011 | | Contributor(s):: Timothy S Fisher
This lecture provides a theoretical development of the transport of thermal energy by conduction in nanomaterials. The physical nature of energy transport by two carriers—electrons and phonons--will be explored from basic principles using a common Landauer framework. Issues including the quantum...
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
23 Mar 2011 | | Contributor(s):: Gerhard Klimeck
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
27 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
[Illinois] Biophotonics 2012: Scattering, Absorbing, and Modulating Molecular Probes for Targeted Imaging and Therapy
05 Jun 2012 | | Contributor(s):: Stephen Boppart