Tags: schottky barrier cntfet

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  1. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    06 Oct 2015 | Compact Models | Contributor(s):

    By Michael Schroter1, Max Haferlach2, Martin Claus3

    1. UCSD 2. Technische Universität Dresden 3. Technische Universität Dresden

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.


  2. in simulating schottky barrier cntfets which boundary condition should be used neumann or drichlet and why?

    Closed | Responses: 1