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Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations
25 Mar 2012 | | Contributor(s):: Che-Sheng Chung
A self-consistent calculation establishes a bulk built-in potential by applying a DC bias to a gate/insulators/semiconductor (GIS) structure of ametal–oxide–semiconductor field-effect transistor (MOSFET). The width of a semi-analytical depletion layer near the interface of the GIS structureof an...