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Tags: semiconductor basics

All Categories (1-14 of 14)

  1. Bikash Sharma

    BIKASH SHARMA__Member__: IEEE__Life Member__: System Society of India; Indian Physical Society __ADDRESS FOR CORRESPONDENCE__Associate ProfessorDept. of Electronics & Communication Engg.Sikkim...

    http://nanohub.org/members/69395

  2. Jun 15 2014

    Cloud-based modeling and simulations to enhance student learning in engineering and science

    This is a FREE ticketed Sunday workshop at the ASEE Conference.See the website link below to register.The workshop facilitators will describe how cloud-based visualization and simulation tools...

    http://nanohub.org/events/details/785

  3. Evaluating the Fermi Function at Ec

    09 Mar 2014 | Online Presentations | Contributor(s): Tanya Faltens

    Short narrated instruction giving step-by-step instructions for evaluating f(E) at Ec. The general method is explained,and a value is calculated for the specific case of Si at 300K.

    http://nanohub.org/resources/13912

  4. Evaluating the Fermi Function at Ec + 0.02 eV

    15 Oct 2013 | Teaching Materials | Contributor(s): Tanya Faltens

    This is a short animation explaining how to evaluate the fermi function, given a band diagram and an energy level of interest.

    http://nanohub.org/resources/19599

  5. FD integral calculator

    13 Jun 2011 | Tools | Contributor(s): Xingshu Sun, Mark Lundstrom, raseong kim

    Calculate the Fermi-Dirac integral given the fermi energy and the order of integral

    http://nanohub.org/resources/fdical

  6. Kevin Manning

    http://nanohub.org/members/92250

  7. Minority Carrier Diffusion Equation (MCDE) Tool

    26 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones

    Apply the Minority Carrier Diffusion Equation (MCDE) to model excess carrier concentration as a function of time or distance.

    http://nanohub.org/resources/mcde

  8. MOSFET Simulation

    04 Oct 2013 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

    http://nanohub.org/resources/mosfetsat

  9. Souvik Mukherjee

    I am Souvik Mukherjee B.Tech in Electronics & Communication Engineering [2008 - 2012], RCCIIT, West Bengal University of Technology, India, born on October 13, 1989 from West Bengal,...

    http://nanohub.org/members/68222

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