Tags: SiC

All Categories (1-20 of 22)

  1. Bulk Monte Carlo Code Described

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...

  2. Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...

  3. Covalent Defects of Carbon Nanotubes: New Class of High Purity, Indistinguishable Quantum Light Sources

    02 Jan 2020 | | Contributor(s):: Han Htoon

    Finally, I will report our most recent Hong-Ou-Mandel quantum optic experiment performed on quantum defects coupled to plasmonic cavities.  We were able to realize indistinguishable single photon generation by exploiting the Purcell enhancement of the radiative decay rate of individual...

  4. IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method

    15 Jul 2021 | | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...

  5. Linda Starr

    https://nanohub.org/members/139608

  6. Perspectives on Ion-Induced Power Device Burnout in Space

    02 Nov 2023 | | Contributor(s):: Kenneth F. Galloway, Scooter Ball

  7. Static DC Transformer Based on Negative Capacitance and High Voltage Engineering

    14 Jul 2022 |

    For DC voltage amplification, the operational amplifier is mostly used in the non-inverting configuration. In this case, the DC voltage amplification is done using a negative capacitance converter. Since the feedback capacitor acts as an open circuit for DC signal, it provides isolation between...

  8. Surface Characterization Studies of Carbon Materials: SS-DNA, SWCNT, Graphene, HOPG

    16 Feb 2010 | | Contributor(s):: Dmitry Zemlyanov

    In this presentation examples of surface characterization studies of carbon specimens will be presented. (1) In particularly, the systematic XPS (X-ray photoelectron spectroscopy) characterization of graphene grown on the SiC surface will be reported. This work demonstrates a use for XPS to...

  9. Thermoelectric Power Factor Calculator for Nanocrystalline Composites

    18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

    Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions

  10. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    19 Jul 2010 | | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

  11. UARK SiC Power MOSFET Model

    22 Feb 2017 | Compact Models | Contributor(s):

    By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1

    University of Arkansas Fayetteville

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching...

    https://nanohub.org/publications/152/?v=1

  12. WHiTe (Wood-High-Temperature) Compact Models

    25 Feb 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=1

  13. WHiTe (Wood-High-Temperature) Compact Models

    10 Mar 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=2

  14. WHiTe (Wood-High-Temperature) Compact Models

    16 Apr 2020 | Compact Models | Contributor(s):

    By Neal Wood

    Toshiba Europe Limited

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=3

  15. WHiTe (Wood-High-Temperature) Compact Models

    21 May 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=4

  16. WHiTe Compact Models

    13 Sep 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=6

  17. WHiTe Compact Models

    01 Nov 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=7

  18. WHiTe Compact Models

    06 Aug 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=8

  19. WHiTe Compact Models

    28 Aug 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=9

  20. WHiTe Compact Models

    30 Oct 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=10