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UARK SiC Power MOSFET Model
22 Feb 2017 | Compact Models | Contributor(s):
By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1
University of Arkansas Fayetteville
A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching...
Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010 | | Contributor(s):: Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...
Surface Characterization Studies of Carbon Materials: SS-DNA, SWCNT, Graphene, HOPG
16 Feb 2010 | | Contributor(s):: Dmitry Zemlyanov
In this presentation examples of surface characterization studies of carbon specimens will be presented. (1) In particularly, the systematic XPS (X-ray photoelectron spectroscopy) characterization of graphene grown on the SiC surface will be reported. This work demonstrates a use for XPS to...
Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions
Bulk Monte Carlo Code Described
out of 5 stars
01 Jul 2008 | | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...