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Quantifying Uncertainties in Physical Models
28 Aug 2017 | | Contributor(s):: Ilias Bilionis
Increasing modeling detail is not necessarily correlated with increasing predictive ability. Setting modeling and numerical discretization errors aside, the more detailed a model gets, the larger the number of parameters required to accurately specify its initial/boundary conditions, constitutive...
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | | Contributor(s):: Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted...
Quantum and Semi-classical Electrostatics Simulation of SOI Trigates
19 Feb 2008 | | Contributor(s):: Hyung-Seok Hahm, Andres Godoy
Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Resonant Tunneling Diode operation
09 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide
20 May 2009 | | Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue
SAMSON Tutorials - Essentials 1 - Introduction to SAMSON Connect
29 Sep 2016 | | Contributor(s):: Stephane Redon
Find out about SAMSON Connect, the online platform where you can download SAMSON, the SAMSON SDK, and add SAMSON Elements to your SAMSON installation.
Scaling Simulation Impact
out of 5 stars
20 Dec 2007 | | Contributor(s):: Ian Foster
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Sentaurus Resources for Frozen Potential Analysis of Solar Cells
29 Sep 2014 | | Contributor(s):: Jim Moore
Two Sentaurus simulation examples demonstrating injection and photocurrent separation using frozen potentials. Includes an example for a simple p-i-n cell and a CIGS/CdS heterojunction cell, as well as Matlab scripts for plotting the results. Documentation is included in the form of the...
Session 1: Discussion
19 Dec 2007 |
Discussion led by Mark Lundstrom, Purdue University.
Session 3: Discussion
20 Dec 2007 |
Discussion led by Jim Demmel, University of California at Berkeley.
Session 4: Discussion
Discussion led by Mark Allendorf, Sandia National Laboratory.
Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization
23 Feb 2014 | | Contributor(s):: Alex Grede
Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.
Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011 | | Contributor(s):: J. L. Gray
Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.
SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
11 Jan 2018 | | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
Surprising Nanophotonic Phenomena in Nature
11 Jul 2016 | | Contributor(s):: Peter Bermel
A broad range of optical phenomena in nature have created long-standing mysteries. For example, what gives butterflies and birds their rich colors? And how can sightings of some unusual natural phenomena like mirages or ball lightning be explained? The process of solving these mysteries has...
Surprising Nanophotonic Phenomena in Nature and Photonic Modeling with S4
13 Jul 2016 | | Contributor(s):: Peter Bermel
I will show how S4sim, a transfer matrix-based optical simulation tool available on nanoHUB.org can be used to precisely calculate these behaviors. A few exciting real-world applications of this work will also be briefly discussed.