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  1. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

  2. Electron Density in a Nanowire

    30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

  3. Tunneling in an Nanometer-Scaled Transistor

    25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

    Electrons tunneling through the gate of an ultra-scaled transistor.

  4. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    18 Jan 2011 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  5. Karim Elgammal

    I am a PhD student at the Royal Institute of Technology ()

    http://nanohub.org/members/47839

  6. how many are there CNTFET simulation methodes

    Closed | Responses: 0

    Dear Mr/Ms 1- how many are there CNTFET simulation methodes?2- whats resourse for there? 3-i want to khnow about CNTFET with slice gate structure

    thanks.

    http://nanohub.org/answers/question/630

  7. 2010 Nano-Biophotonics Summer School @ UIUC Lecture 5 - Biomedicine - A tour of the Cell

    25 Sep 2010 | | Contributor(s):: Marina Marjanovic

    Edited and Uploaded by Omar Sobh, University of Illinois at Urbana-Champaign

  8. Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier

    This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...

  9. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  10. Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling...

  11. Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin, Chris Bowen

    This presentation discusses disorder in AlGaAs unstrained systems in bulk. Bandstructure of an ideal simple unit cellWhat happens when there is disorder?Concept of a supercellBand folding in a supercellBand extraction from the concept of approximate bandstructureComparison of alloy disorder...

  12. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...

  13. Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck

    This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...

  14. Jul 12 2010

    2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    This year’s summer school will have two components: a focus on nanoelectronic devices, with an introduction to spintronics and, second, tutorials on selected topics in nanotechnology. First, we...

    http://nanohub.org/events/details/270

  15. Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects

    07 Jul 2010 | | Contributor(s):: Gerhard Klimeck

    (quantitative RTD modeling at room temperature)

  16. Computer in Science Engineering: featuring nanoHUB.org

    22 Apr 2010 |

    The current issue of Computing in Science and Engineering focuses on cyber-enabled nanotechnology, and nanoHUB.org is featured extensively throughout.

  17. Carbon nanotube bandstructure

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology...

  18. Threshold voltage in a nanowire MOSFET

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...

  19. Resonant Tunneling Diode operation

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...

  20. Nanotechnology Animation Gallery

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...