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[Illinois] Coarse-grained Simulation of Ion Channels
29 Dec 2012 | | Contributor(s):: Umberto Ravaioli
This Summer School will train students in molecular simulation and simulation at multiple time and length scales. Instruction will be provided on quantum Monte Carlo simulation, molecular dynamics, coarse-grained simulations, and multiscale simulations with opportunities for hands-on experience...
The Single-Atom Transistor: How It Was Created and What It May Mean for the Future
21 Dec 2012 | | Contributor(s):: Gerhard Klimeck
Professor Gerhard Klimeck will be coming to speak on his research with single atom transistors.
ECE 606 Lecture 26: The Future of Computational Electronics
20 Dec 2012 | | Contributor(s):: Gerhard Klimeck
Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service
MSE 597GM Lecture 7: Introduction to VKML
26 Sep 2012 | | Contributor(s):: R. Edwin García
MSE 597GM Lecture 8: VKML Tutorial/Python Crash Course
MSE 597GM Lecture 1: Course Introduction
11 Sep 2012 | | Contributor(s):: R. Edwin García
"Michigan Nano Computational Cluster” (MNC2)
The “Michigan Nano Computational Cluster” (MNC2) consists of 14 nodes.Each compute node contains a hexa-core Intel Xeon X5660 processor
running at 2.66 GHz, 24 GB of memory. MNC2 contains 168...
19 Jun 2012 | | Contributor(s):: Umberto Ravaioli
Don't Try These in the Real World
18 Jun 2012 | | Contributor(s):: Lee W. Schruben
Simulation models provide virtually unlimited power; or rather, they provide unlimited virtual power. If you can think of something, you can simulate it. Experimenting in a simulated world, you can change anything, in any way, at any time - even change time itself. Simulators are gods, ruling in...
Application-driven Co-Design: Using Proxy Apps in the ASCR Materials Co-Design Center
31 May 2012 | | Contributor(s):: Jim Belak
Computational materials science is performed with a suite of applications that span the quantum mechanics of interatomic bonding to the continuum mechanics of engineering problems and phenomenon specific models in between. In this talk, we will review this suite and the motifs used in each of...
Illinois 2012: Aravind Alwan: Design and simulation of Microsystems
02 May 2012 | | Contributor(s):: Aravind Alwan, Nadia Jassim
Illinois 2011: Dr. Shah Yunus - Future of Innovation
04 Apr 2012 | | Contributor(s):: Shah Yunus, Nadia Jassim
Dr. Shah Yunus: Operational Vice President for Product Development, ESI-Group.
Illinois 2011: Dr. Shah Yunus - Main Lecture Points
Dr. Shah Yunus: Operational Vice President for Product Development at ESI-Group.
MOSFET Design Simulation I (Instructor Copy)
07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
ECE 656 Lecture 34a: Monte Carlo Simulation I
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 34b: Monte Carlo Simulation II
ECE 656 Lecture 32: Balance Equation Approach III
19 Jan 2012 | | Contributor(s):: Mark Lundstrom
Outline:Review of L31Carrier temperature and heat fluxHeterostructuresSummary
Verification and Validation in Simulations of Complex Engineered Systems
03 Jan 2012 | | Contributor(s):: Robert Moser
Computational simulation is a ubiquitous tool in engineering. Further, the explosion of computational capabilities over the last several decades has resulted in the use of computational models of unprecedented complexity to make critical design and operation decisions. One potential benefit...
Dec 07 2011
International Semiconductor Device Research Symposium (ISDRS) 2011
Atomistic Material Science
03 Nov 2011 | | Contributor(s):: Alejandro Strachan
This course introduces first principles electronic structure calculations of materials properties and the concept of molecular dynamics (MD) simulations of materials focusing on the physics and approximations underlying the simulations and interpretation of their results.