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Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Cancer Care Engineering
31 Jan 2011 | | Contributor(s):: Joseph Pekny
Cyber Infrastructure Days at Purdue University
31 Jan 2011 |
Purdue CI Days 2010 showcases technologies to enhance research, teaching and research funding. The program focus is on how just about any faculty member, research staffer, or graduate student can benefit from these technologies.
31 Jan 2011 | | Contributor(s):: Rudi Eigenmann
Open Science Grid
31 Jan 2011 | | Contributor(s):: Gabriele Garzoglio
What's the HUBbub? - Panel Discussion
31 Jan 2011 | | Contributor(s):: Michael McLennan, Mark Lundstrom, Rudi Eigenmann
Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 |
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
how many are there CNTFET simulation methodes
Closed | Responses: 0
1- how many are there CNTFET simulation methodes?2- whats resourse for there?
3-i want to khnow about CNTFET with slice gate structure
2010 Nano-Biophotonics Summer School @ UIUC Lecture 5 - Biomedicine - A tour of the Cell
25 Sep 2010 | | Contributor(s):: Marina Marjanovic
Edited and Uploaded by Omar Sobh, University of Illinois at Urbana-Champaign
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...
Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors
This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling...
Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses disorder in AlGaAs unstrained systems in bulk. Bandstructure of an ideal simple unit cellWhat happens when there is disorder?Concept of a supercellBand folding in a supercellBand extraction from the concept of approximate bandstructureComparison of alloy disorder with...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption wavelength...