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Threshold voltage in a nanowire MOSFET
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...
Resonant Tunneling Diode operation
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
Nanotechnology Animation Gallery
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...
Nanoelectronic Modeling Lecture 26: NEMO1D -
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | | Contributor(s):: Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...
Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck
This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future cyberinfrastructures in a system of federated HUBs powered by the HUBzero.org infrastructure.
Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...
Closed | Responses: 0
I am trying to simulate N-N junction the first with Nd=1018 and the second with Nd=1014.the doping graph has problem, the doping was 10^18 within the first region and was zero within...
ECE 656 Lecture 31: Monte Carlo Simulation
01 Dec 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 30: Balance Equation Approach III
OutlineCarrier Temperature and Heat FluxBalance equations in 3DHeterostructuresSummary
Lecture 5: NEGF Simulation of Graphene Nanodevices
23 Sep 2009 | | Contributor(s):: Supriyo Datta
Could VEDA gives a animation of the movement of the all cantilever?
VEDA gives the equation of the movement of the end of the cantilever y(xL,t) (where xL is the lentght of the cantilever). Could it be possible to have an animation (that the user could...
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
NCN Nanomaterials: Simulation Tools for Education
02 Jun 2009 |
NCN Nanomaterials: Simulation Tools for Research
Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide
01 Jun 2009 | | Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue
EPR - ESR
14 Apr 2009 | | Contributor(s):: Baudilio Tejerina, Joshua Telser
This program calculates the powder pattern EPR spectra of a 2-spin electronic system.
Theoretical Analysis of Gold Nanoparticles
04 May 2009 | | Contributor(s):: Jon Camden, George C. Schatz, Baudilio Tejerina
All physical and chemical properties are size dependent, and the properties of materials on the nanosize scale have important consequences in wide ranging fields. Exploiting nanoscale behavior will eventually lead scientists to develop devices that can selectively attack diseased cells, increase...
Thermoelectric Power Factor Calculator for Superlattices
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions