Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...
Jul 12 2010
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
07 Jul 2010 | | Contributor(s):: Gerhard Klimeck
(quantitative RTD modeling at room temperature)
Computer in Science Engineering: featuring nanoHUB.org
22 Apr 2010 |
The current issue of Computing in Science and Engineering focuses on cyber-enabled nanotechnology, and nanoHUB.org is featured extensively throughout.
Carbon nanotube bandstructure
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology applications,...
Threshold voltage in a nanowire MOSFET
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...
Resonant Tunneling Diode operation
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
Nanotechnology Animation Gallery
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...
Nanoelectronic Modeling Lecture 26: NEMO1D -
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness...
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | | Contributor(s):: Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...
Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck
This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future cyberinfrastructures in a system of federated HUBs powered by the HUBzero.org infrastructure.
Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...
Closed | Responses: 0
I am trying to simulate N-N junction the first with Nd=1018 and the second with Nd=1014.the doping graph has problem, the doping was 10^18 within the first region and was zero within...
ECE 656 Lecture 31: Monte Carlo Simulation
01 Dec 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 30: Balance Equation Approach III
OutlineCarrier Temperature and Heat FluxBalance equations in 3DHeterostructuresSummary
Lecture 5: NEGF Simulation of Graphene Nanodevices
23 Sep 2009 | | Contributor(s):: Supriyo Datta
Could VEDA gives a animation of the movement of the all cantilever?
VEDA gives the equation of the movement of the end of the cantilever y(xL,t) (where xL is the lentght of the cantilever). Could it be possible to have an animation (that the user could download)...
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
NCN Nanomaterials: Simulation Tools for Education
02 Jun 2009 |