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Tutorial 1: Atomistic Material Science - ab initio simulations of materials
03 Nov 2011 | Online Presentations | Contributor(s): Alejandro Strachan
This lecture introduces first principles electronic structure calculations of materials properties.
It describes the approximations made to the many-body Schrodinger equation in Hartree Fock and...
Tutorial 2: Atomistic Material Science - Molecular Dynamics simulations of materials
This lecture introduces the concept of molecular dynamics
(MD) simulations of materials focusing on the physics and approximations underlying the simulations and interpretation of their results.
2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 | Workshops
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Alumni Discussion Group: LinkedIn
Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011 | Online Presentations | Contributor(s): J. L. Gray
Modeling and simulation play an important role in designing and
optimizing PV systems. This tutorial is a broad overview of the topic
including a look at detailed, numerical device simulation.
What simulation for simulating CNTFET as biosensor applications ?
Closed | Responses: 0
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
What's the HUBbub? HUBzero technology for online research and teaching collaborations
21 Feb 2011 | Workshops | Contributor(s): Michael McLennan
CI Days 2010: Cyberinfrastructure at Purdue
CI Days 2010 Sponsors
NCN, nanoHUB, HUBzero: cyberinfrastructure for nanotechnology
10 Feb 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Presentation made at the Workshop to Develop the Global Nanotechnology Network, Grenoble, France.
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
The HUBzero Platform for Scientific Collaboration
31 Jan 2011 | Online Presentations | Contributor(s): Michael McLennan
The framework that powers nanoHUB.org has been released as an open source package known as the HUBzero(r) Platform for Scientific Collaboration.
Cyber Infrastructure Days at Purdue University
31 Jan 2011 | Workshops
Purdue CI Days 2010 showcases technologies to enhance research, teaching and research funding. The program focus is on how just about any faculty member, research staffer, or graduate student can...
nanoHUB.org - Past, Present, Future...
31 Jan 2011 | Online Presentations | Contributor(s): Mark Lundstrom
31 Jan 2011 | Online Presentations | Contributor(s): Rudi Eigenmann
What's the HUBbub? - Panel Discussion
31 Jan 2011 | Online Presentations | Contributor(s): Michael McLennan, Mark Lundstrom, Rudi Eigenmann
Quantum Dot Wave Function (still image)
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Electron Density in a Nanowire
30 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
Modeling the quantum dot growth in the continuum approximation
12 Jan 2011 | Papers | Contributor(s): Peter Cendula
Quantum dots can grow spontaneously during molecular beam epitaxy of
two materials with different lattice parameters, Stranski-Krastanow growth mode.
We study a mathematical model based on the...
Nov 15 2010
2010 Joint NNIN/C & NCN Fall Workshop: Building a Collaborative Framework for Nanoscale Simulations