Tags: simulator

Resources (1-6 of 6)

  1. BTI Simulator for Two-Stage Model

    27 Jun 2017 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Souvik Mahapatra

    This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two-Stage Model". The simulator can calculate threshold voltage shift...

  2. BTI Simulator for Triple-Well Model

    27 Oct 2016 | | Contributor(s):: Narendra Parihar, Rakesh P Rao, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Triple-Well Model". The simulator can calculate threshold voltage shift due to...

  3. BTI Simulator for Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model

    17 Oct 2016 | | Contributor(s):: Narendra Parihar, Rakesh P Rao, Souvik Mahapatra

    This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model". The...

  4. BTI Simulator for Multi-State Extended Non-radiative Multi-phonon Model (a.ka. Multi-State-Model)

    26 Sep 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Multi-State Extended Non-radiative Multi-phonon...

  5. BTI Simulator for Two Well Non-radiative Multiphonon Model

    06 Sep 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two Well Non-radiative Multi-phonon Model". The...

  6. BTI Simulator for Two Well Thermionic Model

    29 Aug 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the "Two Well Thermionic Model". The simulator can...