-
Hybrid CMOS/SET models for PSpice?
Q&A|Closed | Responses: 2
Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!
https://nanohub.org/answers/question/1404
-
A Circuit-compatible SPICE Model for Phase-field Simulations of Multi-domain Ferroelectrics
17 May 2021 | | Contributor(s):: Chia-Sheng Hsu, Sou-Chi Chang, Dmitri Nikonov, Ian Alexander Young, Azad Naeemi
To describe the multi-domain FE switching dynamics, we present a circuit-compatible model that can solve the time-dependent Ginzburg-Landau (TDGL) equation and Poisson’s equation self-consistently in three-dimensional space with the SPICE simulator. In addition, the FE domain structures...
-
A methodology for SPICE-compatible modeling of nanoMOSFETs
17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...
-
a TCAD Lab
29 Oct 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation
-
Christian Cabrera
https://nanohub.org/members/307730
-
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
22 Jan 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.
-
Formulating ModSpec or: what is a device, exactly?
26 Mar 2017 | | Contributor(s):: Jaijeet Roychowdhury, Tianshi Wang, Karthik Aadithya, A. Gokcen Mahmutoglu, Archit Gupta, Bichen Wu
ModSpec is a mathematically-based, multi-physics format for describing devices and their interaction with networks. This document details the "derivation" of the ModSpec format, describes the MATLAB API for ModSpec, and provides detailed examples.
-
hotSPICE
01 Sep 2011 | | Contributor(s):: Andrew Schwinke, Timothy S Fisher, Greg Walker
Linear thermal circuit simulation tool for both steady-state and transient problems
-
ModSpec: an Open, Universal, Low-Level Model API: Proposal for designation as a CMC-approved standard
26 Mar 2017 | | Contributor(s):: Jaijeet Roychowdhury, Tianshi Wang, A. Gokcen Mahmutoglu, Archit Gupta
This is a presentation given to the CMC (Compact Modeling Coalition) on March 23, 2017, describing the ModSpec device modelling format and its benefits as a standard for compact model specification and interchange. Further mathematical/technical details of ModSpec are in...
-
Ozgur Polat
https://nanohub.org/members/104542
-
Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model
13 Jan 2021 | Compact Models | Contributor(s):
By Lixia Han1, Linlin Cai1, Jinfeng Kang1, Xiaoyan Liu1, Peng Huang1
Peking University
The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be...
https://nanohub.org/publications/403/?v=1
-
Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
27 Mar 2019 | Compact Models | Contributor(s):
By Weijie Xu1, Jinfeng Kang1
Peking University
The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the...
https://nanohub.org/publications/284/?v=1
-
Simulation-ready Compact Modeling of Memristive Devices
25 May 2016 | | Contributor(s):: Tianshi Wang
-
SPICE Model of Graphene Nanoribbon FETs (GNRFET)
12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...
-
SPICE Models for Magnetic Tunnel Junctions Based on Monodomain Approximation
21 Aug 2013 | | Contributor(s):: Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy
Models for simulating a magnetic tunnel junction in HSPICE. The usage description is included in the "USAGE" text file included in the archive. The libraries are encrypted and have been tested in HSPICE-G-2012.06, HSPICE-E-2010.12-SP2 and HSPICE-D-2010.03-SP1. The archives are named...
-
SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018 | | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
-
Spice3f4
14 Aug 2005 | | Contributor(s):: Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
-
The MVS Nanotransistor Model: A Primer
17 Nov 2014 | | Contributor(s):: Mark Lundstrom
In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...
-
W. S. Grabinski
https://www.researchgate.net/profile/Wladek_Grabinski
https://nanohub.org/members/217741
-
Well-Posed Device Models for Electrical Circuit Simulation
26 Mar 2017 | | Contributor(s):: A. Gokcen Mahmutoglu, Tianshi Wang, Archit Gupta, Jaijeet Roychowdhury
This document provides guidelines for creating computational device models that work well in simulation. We build our discussion around the mathematical notion of “well-posedness”. We show that the requirements for a model to be well-posed stem from the internal working mechanisms of...