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Magnetic Tunnel Junction Lab
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23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Course on Beyond CMOS Computing
06 Jun 2013 | Teaching Materials | Contributor(s): Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of...
Comparisons of macrospin and OOMMF simulations
26 Jan 2010 | Presentation Materials | Contributor(s): Dmitri Nikonov, George Bourianoff
Plots of switchign time of nanomagnets by spin torque calculated by macrospin model and micromagnetic tool OOMMF, compared side-by-side.
D. E. Nikonov, G. I. Bourianoff, G. Rowlands, I. N....
EXPERTISEAdvanced Nano-device Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials...