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Magnetic Tunnel Junction Lab
23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
Comparisons of macrospin and OOMMF simulations
25 Jan 2010 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
Plots of switchign time of nanomagnets by spin torque calculated by macrospin model and micromagnetic tool OOMMF, compared side-by-side.D. E. Nikonov, G. I. Bourianoff, G. Rowlands, I. N. KrivorotovShould be read and cited in conjunction withhttp://arxiv.org/abs/1001.4578