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Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | | Contributor(s):: Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of bothspin relaxation in the channel and the tunneling barrier between the source/drain and the channel....