Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both …
http://nanohub.org/resources/8540