Tags: spintronics

Description

Spintronics (a neologism meaning "spin transport electronics"), also known as magnetoelectronics, is an emerging technology that exploits the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. More information on spintronics can be found here.

All Categories (1-20 of 102)

  1. Se Kwon Kim

    http://nanohub.org/members/228851

  2. Mickey Martini

    http://nanohub.org/members/212895

  3. Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems

    26 Oct 2018 | | Contributor(s):: Abhronil Sengupta, Kaushik Roy

    In this presentation, we provide a multi-disciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...

  4. Neil Murray

    http://nanohub.org/members/205375

  5. p-bits for Probabilistic Spin Logic (PSL): A Brief Introduction

    02 Jul 2018 | | Contributor(s):: Supriyo Datta

    Digital electronics is based on stable bits that can have one of two values, 0 and 1. At the other extreme we have quantum computing using using q-bits that can be in superposition states that are 0 and 1 at the same time. In our recent work we have introduced a concept that is intermediate...

  6. p-bits for Probabilistic Spin Logic (PSL)

    10 May 2018 | | Contributor(s):: Supriyo Datta

    Digital electronics is based on stable bits that can have one of two values, 0 and 1. At the other extreme we have quantum computing using using q-bits that can be in superposition states that are 0 and 1 at the same time. In our recent work we have introduced a concept that is intermediate...

  7. Ran Cheng

    Dr. Ran Cheng received his Ph.D. in Physics from the University of Texas at Austin in 2014. He then became a postdoc at Carnegie Mellon University with a joint appointment in Physics and ECE...

    http://nanohub.org/members/196763

  8. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    07 Mar 2018 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG1, Weisheng Zhao1, Jacques-Olivier Klein2, Dafiné Ravelosona2, Hao Cai3, Lirida Naviner3

    1. Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing 100191, China 2. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France 3. Département Communications et Electronique, Télécom-ParisTech, Université Paris-Saclay 75013, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

    http://nanohub.org/publications/56/?v=4

  9. SPICE Subcircuit Generator for Ferromagnetic Nanomaterials

    05 Feb 2018 | | Contributor(s):: Onur Dincer, Azad Naeemi

    Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

  10. Sergey Dizhur

    http://nanohub.org/members/181872

  11. SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components

    11 Oct 2017 | | Contributor(s):: Onur Dincer, Azad Naeemi

    Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels

  12. Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach

    30 Aug 2017 | | Contributor(s):: Rajib Rahman

    In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...

  13. Spin Transport Modeling Tool

    21 Aug 2017 | | Contributor(s):: Onur Dincer, Azad Naeemi

    Calculates spin transport parameters in nanoscale metallic interconnects.

  14. Spin-Orbitronics: A Route to Control Magnets via Spin-Orbit Interaction

    20 Jul 2017 | | Contributor(s):: Upadhyaya, Pramey

    In this talk, I will present this “spin-orbitronic” control for various magnetic systems. In particular, we will focus on the example of spin-orbit-induced manipulation of magnetic domain walls and skyrmions, i.e. particle-like magnetic configurations capable of storing and...

  15. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    12 Jul 2017 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2

    1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

    http://nanohub.org/publications/56/?v=2

  16. CHAVANA HAREESH

    http://nanohub.org/members/171304

  17. Samrat Sarkar

    http://nanohub.org/members/165433

  18. Topological Spintronics: from the Haldane Phase to Spin Devices

    27 Jan 2017 | | Contributor(s):: Nitin Samarth

    e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...

  19. abhishek kumar

    http://nanohub.org/members/160954

  20. Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets

    09 Dec 2016 | | Contributor(s):: Rajib Rahman

    In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy of...