
Ran Cheng
Dr. Ran Cheng received his Ph.D. in Physics from the University of Texas at Austin in 2014. He then became a postdoc at Carnegie Mellon University with a joint appointment in Physics and ECE...
http://nanohub.org/members/196763

SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018  Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

Sergey Dizhur
http://nanohub.org/members/181872

SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components
11 Oct 2017  Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels

Quantum Spins in the SolidState: An Atomistic MaterialtoDevice Modeling Approach
30 Aug 2017   Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spinorbit,...

Spin Transport Modeling Tool
21 Aug 2017   Contributor(s):: Onur Dincer, Azad Naeemi
Calculates spin transport parameters in nanoscale metallic interconnects.

SpinOrbitronics: A Route to Control Magnets via SpinOrbit Interaction
20 Jul 2017   Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spinorbitronic” control for various magnetic systems. In particular, we will focus on the example of spinorbitinduced manipulation of magnetic domain walls and skyrmions, i.e. particlelike magnetic configurations capable of storing and...

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017  Compact Models  Contributor(s):
By You WANG^{1}, Yue ZHANG^{2}, JacquesOlivier Klein^{3}, Thibaut Devolder^{3}, Dafiné Ravelosona^{3}, Claude Chappert^{3}, Weisheng Zhao^{2}
1. Institut MinesTéléecom, TélécomParisTech, LTCICNRSUMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of ParisSud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
http://nanohub.org/publications/56/?v=2

CHAVANA HAREESH
http://nanohub.org/members/171304

Samrat Sarkar
http://nanohub.org/members/165433

Topological Spintronics: from the Haldane Phase to Spin Devices
27 Jan 2017   Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered...

abhishek kumar
http://nanohub.org/members/160954

Valley Dependent gfactors in Silicon: Role of SpinOrbit and Micromagnets
09 Dec 2016   Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valleydependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spinorbit coupling and can cause devicetodevice variations in gfactors. I will also describe the anisotropy...

Prospects for Using Magnetic Insulators in Spintronics
28 Sep 2016   Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...

Bibek Bhandari
http://nanohub.org/members/153360

Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016   Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spinorbitvalley coupling in spin qubits to nonequilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

Ultrafast Optical Measurements of Spin Polarization in Semiconductors
29 Mar 2016   Contributor(s):: Vanessa Sih
n this talk, I will describe optical techniques that can measure the magnitude and direction of spinorbit fields and electricallygenerated spin polarization in nonmagnetic semiconductors and the modification of the electron spin precession frequency in a bulk semiconductor using an applied...

narasimhulu thoti
http://nanohub.org/members/137783

Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
30 Sep 2015   Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spindriven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

Abhisek kole
http://nanohub.org/members/130541