
Se Kwon Kim
http://nanohub.org/members/228851

Mickey Martini
http://nanohub.org/members/212895

Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems
26 Oct 2018   Contributor(s):: Abhronil Sengupta, Kaushik Roy
In this presentation, we provide a multidisciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...

Neil Murray
http://nanohub.org/members/205375

pbits for Probabilistic Spin Logic (PSL): A Brief Introduction
02 Jul 2018   Contributor(s):: Supriyo Datta
Digital electronics is based on stable bits that can have one of two values, 0 and 1. At the other extreme we have quantum computing using using qbits that can be in superposition states that are 0 and 1 at the same time. In our recent work we have introduced a concept that is intermediate...

pbits for Probabilistic Spin Logic (PSL)
10 May 2018   Contributor(s):: Supriyo Datta
Digital electronics is based on stable bits that can have one of two values, 0 and 1. At the other extreme we have quantum computing using using qbits that can be in superposition states that are 0 and 1 at the same time. In our recent work we have introduced a concept that is intermediate...

Ran Cheng
Dr. Ran Cheng received his Ph.D. in Physics from the University of Texas at Austin in 2014. He then became a postdoc at Carnegie Mellon University with a joint appointment in Physics and ECE...
http://nanohub.org/members/196763

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
07 Mar 2018  Compact Models  Contributor(s):
By You WANG^{1}, Yue ZHANG^{1}, Weisheng Zhao^{1}, JacquesOlivier Klein^{2}, Dafiné Ravelosona^{2}, Hao Cai^{3}, Lirida Naviner^{3}
1. Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing 100191, China 2. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of ParisSud 11, 91405 Orsay, France 3. Département Communications et Electronique, TélécomParisTech, Université ParisSaclay 75013, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
http://nanohub.org/publications/56/?v=4

SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018   Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

Sergey Dizhur
http://nanohub.org/members/181872

SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components
11 Oct 2017   Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels

Quantum Spins in the SolidState: An Atomistic MaterialtoDevice Modeling Approach
30 Aug 2017   Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spinorbit,...

Spin Transport Modeling Tool
21 Aug 2017   Contributor(s):: Onur Dincer, Azad Naeemi
Calculates spin transport parameters in nanoscale metallic interconnects.

SpinOrbitronics: A Route to Control Magnets via SpinOrbit Interaction
20 Jul 2017   Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spinorbitronic” control for various magnetic systems. In particular, we will focus on the example of spinorbitinduced manipulation of magnetic domain walls and skyrmions, i.e. particlelike magnetic configurations capable of storing and...

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017  Compact Models  Contributor(s):
By You WANG^{1}, Yue ZHANG^{2}, JacquesOlivier Klein^{3}, Thibaut Devolder^{3}, Dafiné Ravelosona^{3}, Claude Chappert^{3}, Weisheng Zhao^{2}
1. Institut MinesTéléecom, TélécomParisTech, LTCICNRSUMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of ParisSud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
http://nanohub.org/publications/56/?v=2

CHAVANA HAREESH
http://nanohub.org/members/171304

Samrat Sarkar
http://nanohub.org/members/165433

Topological Spintronics: from the Haldane Phase to Spin Devices
27 Jan 2017   Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...

abhishek kumar
http://nanohub.org/members/160954

Valley Dependent gfactors in Silicon: Role of SpinOrbit and Micromagnets
09 Dec 2016   Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valleydependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spinorbit coupling and can cause devicetodevice variations in gfactors. I will also describe the anisotropy of...