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Spintronics (a neologism meaning "spin transport electronics"), also known as magnetoelectronics, is an emerging technology that exploits the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. More information on spintronics can be found here.
Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems
26 Oct 2018 | | Contributor(s):: Abhronil Sengupta, Kaushik Roy
In this presentation, we provide a multi-disciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...
p-bits for Probabilistic Spin Logic (PSL): A Brief Introduction
02 Jul 2018 | | Contributor(s):: Supriyo Datta
Digital electronics is based on stable bits that can have one of two values, 0 and 1. At the other extreme we have quantum computing using using q-bits that can be in superposition states that are 0 and 1 at the same time. In our recent work we have introduced a concept that is intermediate...
p-bits for Probabilistic Spin Logic (PSL)
10 May 2018 | | Contributor(s):: Supriyo Datta
SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018 | | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components
11 Oct 2017 | | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels
Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | | Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...
Spin Transport Modeling Tool
21 Aug 2017 | | Contributor(s):: Onur Dincer, Azad Naeemi
Calculates spin transport parameters in nanoscale metallic interconnects.
Spin-Orbitronics: A Route to Control Magnets via Spin-Orbit Interaction
20 Jul 2017 | | Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spin-orbitronic” control for various magnetic systems. In particular, we will focus on the example of spin-orbit-induced manipulation of magnetic domain walls and skyrmions, i.e. particle-like magnetic configurations capable of storing and...
Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017 | Compact Models | Contributor(s):
By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2
1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
Topological Spintronics: from the Haldane Phase to Spin Devices
27 Jan 2017 | | Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
09 Dec 2016 | | Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy of...
Prospects for Using Magnetic Insulators in Spintronics
28 Sep 2016 | | Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...