
Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems
26 Oct 2018   Contributor(s):: Abhronil Sengupta, Kaushik Roy
In this presentation, we provide a multidisciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...

Quantum Spins in the SolidState: An Atomistic MaterialtoDevice Modeling Approach
30 Aug 2017   Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spinorbit,...

SpinOrbitronics: A Route to Control Magnets via SpinOrbit Interaction
21 Jul 2017   Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spinorbitronic” control for various magnetic systems. In particular, we will focus on the example of spinorbitinduced manipulation of magnetic domain walls and skyrmions, i.e. particlelike magnetic configurations capable of storing and...

Topological Spintronics: from the Haldane Phase to Spin Devices
31 Jan 2017   Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...

Valley Dependent gfactors in Silicon: Role of SpinOrbit and Micromagnets
13 Dec 2016   Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valleydependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spinorbit coupling and can cause devicetodevice variations in gfactors. I will also describe the anisotropy of...

Prospects for Using Magnetic Insulators in Spintronics
29 Sep 2016   Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...

Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016   Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spinorbitvalley coupling in spin qubits to nonequilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

Ultrafast Optical Measurements of Spin Polarization in Semiconductors
29 Mar 2016   Contributor(s):: Vanessa Sih
n this talk, I will describe optical techniques that can measure the magnitude and direction of spinorbit fields and electricallygenerated spin polarization in nonmagnetic semiconductors and the modification of the electron spin precession frequency in a bulk semiconductor using an applied...

Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
15 Oct 2015   Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spindriven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

Symmetry, Dimension, and Spin: Understanding transport in 2D 'phosphorene'
03 Mar 2015   Contributor(s):: Ian Appelbaum
Despite its low atomic number and inversion symmetry, recent electronic measurements demonstrate that (groupIV) graphene has a greatly disappointing spin lifetime, corroborated by theory showing strong spinflip scattering by flexural (outofplane) phonons. There exists a class of graphenelike...

AllSpin Logic Devices
19 Jul 2012   Contributor(s):: Behtash Behinaein
We propose a spintronic device that uses spin at every stage of its operation: input and output information are represented by the magnetization of nanomagnets which communicate through spincoherent channels. Based on simulations with an experimentally benchmarked model we argue that the device...

Spin Transport and Topological Insulators I
29 Aug 2011   Contributor(s):: Supriyo Datta
A major development of the last two decades, the physical and conceptual integration of what used to be two distinct unrelated fields, namely spintronics and magnetics.

Spin Transport and Topological Insulators II
19 Aug 2011   Contributor(s):: Supriyo Datta
A major development of the last two decades, the physical and conceptual integration of what used to be two distinct unrelated fields, namely spintronics and magnetics.

Putting the Electron’s Spin to Work
14 Apr 2011   Contributor(s):: Daniel Ralph
I will discuss recent progress in experimental techniques to control the orientations of nanoscale magnetic moments and electron spins, and to use these new means of control for applications. One powerful new capability arises from the fact that thin magnetic layers can act as filters for spins.

The Elusive Spin Transistor
11 Apr 2011   Contributor(s):: Supriyo Datta
This presentation is a short introductory tutorial on spintransistors.

Control of Spin Precession in a DattaDas Transistor Structure
11 Apr 2011   Contributor(s):: Hyun Cheol Koo
Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, powercost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010   Contributor(s):: Yunfei Gao
A numerical simulation of spindependent quantum transport for a spin field effect transistor(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of bothspin relaxation in the channel and the tunneling barrier between the source/drain and the channel....

Taxonomy of spintronics (a zoo of devices)
02 Nov 2006   Contributor(s):: Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT, AND,...

ECE 659 Lecture 35: Entropy
28 Apr 2009   Contributor(s):: Supriyo Datta

ECE 659 Lecture 32: Spin Torque/PsuedoSpin
16 Apr 2009   Contributor(s):: Supriyo Datta