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Spintronics (a neologism meaning "spin transport electronics"), also known as magnetoelectronics, is an emerging technology that exploits the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. More information on spintronics can be found here.
Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems
26 Oct 2018 | | Contributor(s):: Abhronil Sengupta, Kaushik Roy
In this presentation, we provide a multi-disciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...
Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | | Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...
Spin-Orbitronics: A Route to Control Magnets via Spin-Orbit Interaction
21 Jul 2017 | | Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spin-orbitronic” control for various magnetic systems. In particular, we will focus on the example of spin-orbit-induced manipulation of magnetic domain walls and skyrmions, i.e. particle-like magnetic configurations capable of storing and...
Topological Spintronics: from the Haldane Phase to Spin Devices
31 Jan 2017 | | Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
13 Dec 2016 | | Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy of...
Prospects for Using Magnetic Insulators in Spintronics
29 Sep 2016 | | Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Ultrafast Optical Measurements of Spin Polarization in Semiconductors
29 Mar 2016 | | Contributor(s):: Vanessa Sih
n this talk, I will describe optical techniques that can measure the magnitude and direction of spin-orbit fields and electrically-generated spin polarization in non-magnetic semiconductors and the modification of the electron spin precession frequency in a bulk semiconductor using an applied...
Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
15 Oct 2015 | | Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...
Symmetry, Dimension, and Spin: Understanding transport in 2D 'phosphorene'
03 Mar 2015 | | Contributor(s):: Ian Appelbaum
Despite its low atomic number and inversion symmetry, recent electronic measurements demonstrate that (group-IV) graphene has a greatly disappointing spin lifetime, corroborated by theory showing strong spin-flip scattering by flexural (out-of-plane) phonons. There exists a class of graphene-like...
All-Spin Logic Devices
19 Jul 2012 | | Contributor(s):: Behtash Behinaein
We propose a spintronic device that uses spin at every stage of its operation: input and output information are represented by the magnetization of nanomagnets which communicate through spin-coherent channels. Based on simulations with an experimentally benchmarked model we argue that the device...
Spin Transport and Topological Insulators I
29 Aug 2011 | | Contributor(s):: Supriyo Datta
A major development of the last two decades, the physical and conceptual integration of what used to be two distinct unrelated fields, namely spintronics and magnetics.
Spin Transport and Topological Insulators II
19 Aug 2011 | | Contributor(s):: Supriyo Datta
Putting the Electron’s Spin to Work
14 Apr 2011 | | Contributor(s):: Daniel Ralph
I will discuss recent progress in experimental techniques to control the orientations of nanoscale magnetic moments and electron spins, and to use these new means of control for applications. One powerful new capability arises from the fact that thin magnetic layers can act as filters for spins.
The Elusive Spin Transistor
11 Apr 2011 | | Contributor(s):: Supriyo Datta
This presentation is a short introductory tutorial on spin-transistors.
Control of Spin Precession in a Datta-Das Transistor Structure
11 Apr 2011 | | Contributor(s):: Hyun Cheol Koo
Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...
Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | | Contributor(s):: Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of bothspin relaxation in the channel and the tunneling barrier between the source/drain and the channel....
Taxonomy of spintronics (a zoo of devices)
out of 5 stars
02 Nov 2006 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT, AND,...
ECE 659 Lecture 35: Entropy
28 Apr 2009 | | Contributor(s):: Supriyo Datta
ECE 659 Lecture 32: Spin Torque/Psuedo-Spin
16 Apr 2009 | | Contributor(s):: Supriyo Datta