
Magnetic Tunnel Junction (MTJ) as Stochastic Neurons and Synapses: Stochastic Binary Neural Networks, Bayesian Inferencing, Optimization Problems
26 Oct 2018   Contributor(s):: Abhronil Sengupta, Kaushik Roy
In this presentation, we provide a multidisciplinary perspective across the stack of devices, circuits, and algorithms to illustrate how the stochastic switching dynamics of spintronic devices in the presence of thermal noise can provide a direct mapping to the units of such computing...

SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018   Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components
11 Oct 2017   Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels

Quantum Spins in the SolidState: An Atomistic MaterialtoDevice Modeling Approach
30 Aug 2017   Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spinorbit,...

Spin Transport Modeling Tool
21 Aug 2017   Contributor(s):: Onur Dincer, Azad Naeemi
Calculates spin transport parameters in nanoscale metallic interconnects.

SpinOrbitronics: A Route to Control Magnets via SpinOrbit Interaction
20 Jul 2017   Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spinorbitronic” control for various magnetic systems. In particular, we will focus on the example of spinorbitinduced manipulation of magnetic domain walls and skyrmions, i.e. particlelike magnetic configurations capable of storing and...

Topological Spintronics: from the Haldane Phase to Spin Devices
27 Jan 2017   Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered using...

Valley Dependent gfactors in Silicon: Role of SpinOrbit and Micromagnets
09 Dec 2016   Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valleydependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spinorbit coupling and can cause devicetodevice variations in gfactors. I will also describe the anisotropy of...

Prospects for Using Magnetic Insulators in Spintronics
28 Sep 2016   Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...

Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016   Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spinorbitvalley coupling in spin qubits to nonequilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

Ultrafast Optical Measurements of Spin Polarization in Semiconductors
29 Mar 2016   Contributor(s):: Vanessa Sih
n this talk, I will describe optical techniques that can measure the magnitude and direction of spinorbit fields and electricallygenerated spin polarization in nonmagnetic semiconductors and the modification of the electron spin precession frequency in a bulk semiconductor using an applied...

Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
30 Sep 2015   Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spindriven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

Modular Approach to Spintronics
28 Apr 2015   Contributor(s):: Kerem Yunus Camsari
There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an everincreasing set of building...

Symmetry, Dimension, and Spin: Understanding transport in 2D 'phosphorene'
02 Mar 2015   Contributor(s):: Ian Appelbaum
Despite its low atomic number and inversion symmetry, recent electronic measurements demonstrate that (groupIV) graphene has a greatly disappointing spin lifetime, corroborated by theory showing strong spinflip scattering by flexural (outofplane) phonons. There exists a class of graphenelike...

NonLocal Inverse Spin Hall Effect Experiment
26 Oct 2014   Contributor(s):: Kerem Yunus Camsari, Samiran Ganguly
The Modular Spintronics Library can be used to model a wide variety of devices and experimental structures. Here we present such an experimental structure that can be used to characterize the "Inverse Spin Hall Effect" and the "Spin Hall Angle" in various different materials....

NonLocal RSO DattaDas Spin Transistor
26 Oct 2014   Contributor(s):: Kerem Yunus Camsari, Samiran Ganguly
Spinorbit coupling phenomena in semiconductor materials constitute an important avenue for spintronics. The "Rashba Effect" that is commonly observed in III‐V materials has been predicted as a possible way of manipulating spins to show transistor action, and has...

Magnetic Tunnel Junction Lab
23 Sep 2013   Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

Course on Beyond CMOS Computing
06 Jun 2013   Contributor(s):: Dmitri Nikonov
Complementary metaloxidesemiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

AllSpin Logic Devices
08 Feb 2010   Contributor(s):: Behtash Behinaein
We propose a spintronic device that uses spin at every stage of its operation: input and output information are represented by the magnetization of nanomagnets which communicate through spincoherent channels. Based on simulations with an experimentally benchmarked model we argue that the device...

Spin Transport and Topological Insulators I
19 Aug 2011   Contributor(s):: Supriyo Datta
A major development of the last two decades, the physical and conceptual integration of what used to be two distinct unrelated fields, namely spintronics and magnetics.