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Tags: strain

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  1. Structure and Morphology of Silicon Germanium Thin Films

    30 Dec 2013 | Publications | Contributor(s): Brian Demczyk

    Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum...

    http://nanohub.org/resources/20123

  2. Exit code 139

    Closed | Responses: 1

    GaAs with biaxial strain, swept from -3% to +3% produces the following error: Problem launching job: Program...

    http://nanohub.org/answers/question/1217

  3. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...

    http://nanohub.org/resources/16192

  4. Excited State Spectroscopy of a Quantum Dot Molecule

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...

    http://nanohub.org/resources/12686

  5. NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

    18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh

    http://nanohub.org/resources/14745

  6. NEMO5 Tutorial 5B: Strain

    18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh

    Learn how the NEMO5 strain solver works.

    http://nanohub.org/resources/14723

  7. NEMO5 Overview Presentation

    17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

    This presentation gives an overview of the current functionality of NEMO5.

    http://nanohub.org/resources/14701

  8. Polarization Response of Multi-layer InAs Quantum Dot Stacks

    25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

    Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...

    http://nanohub.org/resources/12312

  9. Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale

    22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar

    Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the...

    http://nanohub.org/resources/11603

  10. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...

    http://nanohub.org/resources/9332

  11. Coupled Effect of Strain and Magnetic Field on Electronic Bandstructure of Graphene

    07 Dec 2010 | Publications | Contributor(s): yashudeep singh

    We explore the possibility of coupling between planar strain and perpendicular magnetic field on electronic bandstructure of graphene. We study uni-axially, bi-axially and shear strained graphene...

    http://nanohub.org/resources/10126

  12. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....

    http://nanohub.org/resources/9272

  13. InAs: Evolution of iso-energy surfaces for heavy, light, and split-off holes due to uniaxial strain.

    25 May 2010 | Animations | Contributor(s): Abhijeet Paul, Denis Areshkin, Gerhard Klimeck

    Movie was generated using Band Structure Lab tool at nanoHUB and allows to scan over four parameters: Hole energy measured from the top of the corresponding band (i.e. the origin of energy...

    http://nanohub.org/resources/9016

  14. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

    23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

    http://nanohub.org/resources/6067

  15. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks

    14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin

    Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the...

    http://nanohub.org/resources/3823

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