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Machine learned approximations to Density Functional Theory Hamiltonians - Towards High-Throughput Screening of Electronic Structure and Transport in Materials
13 Dec 2016 | | Contributor(s):: Ganesh Krishna Hegde
We present results from our recent work on direct machine learning of DFT Hamiltonians. We show that approximating DFT Hamiltonians accurately by direct learning is feasible and compare them to existing semi-empirical approaches to the problem. The technique we have proposed requires little...
[Illinois] Peptide Release from the Cells of the Dorsal Root Ganglion upon Application of Tensile Strain
04 Feb 2014 | | Contributor(s):: Emily Tillmaand
Morphological and electrophysiological studies have shown that neurons respond to specific mechanical environments. However, studies linking specific neuropeptide release based on changes in the mechanical environment are lacking. To further study the effect of mechanical stress on the cells of...
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | | Contributor(s):: Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to...
Excited State Spectroscopy of a Quantum Dot Molecule
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (Phys. Rev. Lett. 94 057402, 2005) is quantitatively reproduced,...
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | | Contributor(s):: Yuling Hsueh
NEMO5 Tutorial 5B: Strain
18 Jul 2012 | | Contributor(s):: Hesameddin Ilatikhameneh
Learn how the NEMO5 strain solver works.
NEMO5 Overview Presentation
17 Jul 2012 | | Contributor(s):: Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | | Contributor(s):: Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum...
Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale
22 Sep 2011 | | Contributor(s):: Vikas Tomar
Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the size effect, the thermal properties of bulk silicon cannot represent those of silicon...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
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23 Dec 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its...