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[Illinois] Peptide Release from the Cells of the Dorsal Root Ganglion upon Application of Tensile Strain
04 Feb 2014 | Online Presentations | Contributor(s): Emily Tillmaand
Morphological and electrophysiological studies have shown that neurons respond to specific mechanical environments. However, studies linking specific neuropeptide release based on changes in the...
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...
Excited State Spectroscopy of a Quantum Dot Molecule
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh
NEMO5 Tutorial 5B: Strain
18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh
Learn how the NEMO5 strain solver works.
NEMO5 Overview Presentation
17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...
Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale
22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar
Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
5.0 out of 5 stars
23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...