Why quantum dot simulation domain must contain multi-million atoms?

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the …

https://nanohub.org/resources/16192

Excited State Spectroscopy of a Quantum Dot Molecule

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed …

https://nanohub.org/resources/12686

NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh

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https://nanohub.org/resources/14745

NEMO5 Tutorial 5B: Strain

18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh

Learn how the NEMO5 strain solver works.

https://nanohub.org/resources/14723

NEMO5 Overview Presentation

17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

This presentation gives an overview of the current functionality of NEMO5.

https://nanohub.org/resources/14701

Polarization Response of Multi-layer InAs Quantum Dot Stacks

25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we …

https://nanohub.org/resources/12312

Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale

22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar

Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the …

https://nanohub.org/resources/11603

Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman

This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. …

https://nanohub.org/resources/9272

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present …

https://nanohub.org/resources/6067