Support

Support Options

Submit a Support Ticket

 

Tags: strain

Resources (1-14 of 14)

  1. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...

    http://nanohub.org/resources/16192

  2. Excited State Spectroscopy of a Quantum Dot Molecule

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...

    http://nanohub.org/resources/12686

  3. NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

    18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh

    http://nanohub.org/resources/14745

  4. NEMO5 Tutorial 5B: Strain

    18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh

    Learn how the NEMO5 strain solver works.

    http://nanohub.org/resources/14723

  5. NEMO5 Overview Presentation

    17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

    This presentation gives an overview of the current functionality of NEMO5.

    http://nanohub.org/resources/14701

  6. Polarization Response of Multi-layer InAs Quantum Dot Stacks

    25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

    Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...

    http://nanohub.org/resources/12312

  7. Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale

    22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar

    Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the...

    http://nanohub.org/resources/11603

  8. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....

    http://nanohub.org/resources/9272

  9. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

    23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

    http://nanohub.org/resources/6067

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.