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Excited State Spectroscopy of a Quantum Dot Molecule
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...
Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale
22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar
Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
NEMO5 Overview Presentation
17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
NEMO5 Tutorial 5B: Strain
18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh
Learn how the NEMO5 strain solver works.
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
5.0 out of 5 stars
31 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...
Why quantum dot simulation domain must contain multi-million atoms?
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...
[Illinois] Peptide Release from the Cells of the Dorsal Root Ganglion upon Application of Tensile Strain
04 Feb 2014 | Online Presentations | Contributor(s): Emily Tillmaand
Morphological and electrophysiological studies have shown that neurons respond to specific mechanical environments. However, studies linking specific neuropeptide release based on changes in the...