Why quantum dot simulation domain must contain multi-million atoms?

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the …

https://nanohub.org/resources/16192

Excited State Spectroscopy of a Quantum Dot Molecule

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed …

https://nanohub.org/resources/12686

NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh

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https://nanohub.org/resources/14745

NEMO5 Tutorial 5B: Strain

18 Jul 2012 | Online Presentations | Contributor(s): Hesameddin Ilatikhameneh

Learn how the NEMO5 strain solver works.

https://nanohub.org/resources/14723

NEMO5 Overview Presentation

17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

This presentation gives an overview of the current functionality of NEMO5.

https://nanohub.org/resources/14701

Polarization Response of Multi-layer InAs Quantum Dot Stacks

25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we …

https://nanohub.org/resources/12312

Experiments and Models Regarding Strain Dependent Thermal Conductivity and Strength at the Nanoscale and Microscale

22 Sep 2011 | Online Presentations | Contributor(s): Vikas Tomar

Silicon micro- and nano-structures are essential in today’s integrated circuits and sensors. The functioning and performance of such devices are highly affected by thermal properties. Due to the …

https://nanohub.org/resources/11603

Quantitative Modeling and Simulation of Quantum Dots

18 Apr 2011 | Notes | Contributor(s): Muhammad Usman

Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is …

https://nanohub.org/resources/9332

Coupled Effect of Strain and Magnetic Field on Electronic Bandstructure of Graphene

07 Dec 2010 | Publications | Contributor(s): yashudeep singh

We explore the possibility of coupling between planar strain and perpendicular magnetic field on electronic bandstructure of graphene. We study uni-axially, bi-axially and shear strained graphene …

https://nanohub.org/resources/10126

Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman

This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. …

https://nanohub.org/resources/9272

InAs: Evolution of iso-energy surfaces for heavy, light, and split-off holes due to uniaxial strain.

25 May 2010 | Animations | Contributor(s): Abhijeet Paul, Denis Areshkin, Gerhard Klimeck

Movie was generated using Band Structure Lab tool at nanoHUB and allows to scan over four parameters: Hole energy measured from the top of the corresponding band (i.e. the origin of energy scales …

https://nanohub.org/resources/9016

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present …

https://nanohub.org/resources/6067

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks

14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin

Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical …

https://nanohub.org/resources/3823