Tags: TCAD

Online Presentations (1-5 of 5)

  1. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...

  2. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

  3. Computational Modeling: Experience from my Bell Lab Days

    19 Dec 2007 | | Contributor(s):: Muhammad A. Alam

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

  4. TCAD Revisited, 2007: An Engineer’s Point of View

    19 Dec 2007 | | Contributor(s):: Constantin Bulucea

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

  5. Simulating with PETE: Purdue Exploratory Technology Evaluator

    25 Sep 2007 | | Contributor(s):: Arijit Raychowdhury

    Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain,...