nanoHUB could be intermittently unavailable on 05/04 from 8:00 am – 1:00 pm (EST) for scheduled maintenance. All tool sessions will expire on 05/04 at 8:00 am (EST).
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
Computational Modeling: Experience from my Bell Lab Days
5.0 out of 5 stars
19 Dec 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
TCAD Revisited, 2007: An Engineer’s Point of View
19 Dec 2007 | Online Presentations | Contributor(s): Constantin Bulucea
Simulating with PETE: Purdue Exploratory Technology Evaluator
0.0 out of 5 stars
25 Sep 2007 | Online Presentations | Contributor(s): Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms...