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Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...
Quantum and Thermal Effects in Nanoscale Devices
out of 5 stars
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007 | | Contributor(s):: Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
TCAD Revisited, 2007: An Engineer’s Point of View
19 Dec 2007 | | Contributor(s):: Constantin Bulucea
Simulating with PETE: Purdue Exploratory Technology Evaluator
25 Sep 2007 | | Contributor(s):: Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain,...