
TCAD Code for Simulation of Single and Dual Active Layer Oxide TFTs
19 Apr 2017   Contributor(s):: Kevin Stewart
Silvaco ATLAS 2D device simulation software was used to simulate single and dual active layer oxide TFTs. The input files for two cases are attached: 30 nm IGZO TFT 3/27 nm ITO/IGZO TFT

TCAD Files For Simulation Of Boron Indium Oxide Thin Film Transistors
09 Feb 2017   Contributor(s):: Kevin Stewart
Silvaco ATLAS 2D device simulation software was used to simulate BIO TFTs. The input files for two cases are attached: Simulation of device annealed at 200 °C Simulation of device annealed at 400 °C

Simulation of surface depletion in GaAs
Closed  Responses: 0
I have some problems when simulating the surface depletion in an epitaxial GaAs layer with ATLAS. According to the abrupt depletion aproximation, the depletion region extends to a depth...
http://nanohub.org/answers/question/1743

How to define source and drain region for 3D cylindrical VNAND flash memory cell structure
Closed  Responses: 1
Hi,
Can anybody help me in creating source/drain region if I want to create a 3D cylindrical SONOS memory using Sentaurus Structure Editor? I can give more details based on your...
http://nanohub.org/answers/question/1624

Ozgur Polat
http://nanohub.org/members/104542

Tapas Kumar Maiti
Dr. Tapas Kumar Maiti is a scifi engineering scientist, currently working as an associate professor at Hiroshima University, Japan on micro/nano electronic devices, compact modeling (SPICE), IC...
http://nanohub.org/members/89493

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013   Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

Simulation time
Closed  Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 1530’. Did I miss something ?
http://nanohub.org/answers/question/1103

Manual for Archimedes, the GNU Monte Carlo simulator
25 Jun 2012   Contributor(s):: Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has been created by Jean Michel D. Sellier who is, since then, the leader of the project and the main...

Can any one please suggest me a good tutorial for learning about asymmetric mosfets ?
Closed  Responses: 0
I am doing a final year project where in I am expected to come up with a solution to the present problems of a MOSFET through asymmetry, but I cant find anything productive please...
http://nanohub.org/answers/question/962

how can I use this program
Closed  Responses: 0
how can I use this program, I could not understand it, I hope there is someone especiallist in nanoelectronics (SNWFET)can help, with detailed. thanks
http://nanohub.org/answers/question/821

TCAD silvaco questions
Closed  Responses: 2
I am in need to help me in my project which entitled “Study and Simulation of Electrical Properties of organic photovoltaic cells based on novel polymers (πconjugated)” by Silvaco...
http://nanohub.org/answers/question/817

Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010   Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...

Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008   Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the selfconsistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

BJT Lab
06 Feb 2008   Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.

Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007   Contributor(s):: Muhammad A. Alam
This presentation was one of 13 presentations in the oneday forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

TCAD Revisited, 2007: An Engineer’s Point of View
19 Dec 2007   Contributor(s):: Constantin Bulucea
This presentation was one of 13 presentations in the oneday forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

Simulating with PETE: Purdue Exploratory Technology Evaluator
25 Sep 2007   Contributor(s):: Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of IV and CV tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain,...

tsuprem4
30 Apr 2007   Contributor(s):: Steven Clark
TSUPREM4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.