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Simulation of surface depletion in GaAs
Closed | Responses: 0
I have some problems when simulating the surface depletion in an epitaxial GaAs layer with ATLAS. According to the abrupt depletion aproximation, the depletion region extends to a depth...
How to define source and drain region for 3D cylindrical VNAND flash memory cell structure
Can anybody help me in creating source/drain region if I want to create a 3D cylindrical SONOS memory using Sentaurus Structure Editor? I can give more details based on your...
Tapas Kumar Maiti
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Closed | Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?
Manual for Archimedes, the GNU Monte Carlo simulator
25 Jun 2012 | Teaching Materials | Contributor(s): Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.
Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has...
Can any one please suggest me a good tutorial for learning about asymmetric mosfets ?
I am doing a final year project where in I am expected to come up with a solution to the present problems of a MOSFET through asymmetry, but I cant find anything productive please...
how can I use this program
how can I use this program, I could not understand it, I hope there is someone especiallist in nanoelectronics (SNW-FET)can help, with detailed. thanks
TCAD silvaco questions
Closed | Responses: 2
I am in need to help me in my project which entitled “Study and Simulation of Electrical Properties of organic photovoltaic cells based on novel polymers (π-conjugated)” by Silvaco...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
20 Mar 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
TCAD Revisited, 2007: An Engineer’s Point of View
19 Dec 2007 | Online Presentations | Contributor(s): Constantin Bulucea
Simulating with PETE: Purdue Exploratory Technology Evaluator
0.0 out of 5 stars
25 Sep 2007 | Online Presentations | Contributor(s): Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms...
30 Apr 2007 | Tools | Contributor(s): Steven Clark
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device