
Simulation of surface depletion in GaAs
Closed  Responses: 0
I have some problems when simulating the surface depletion in an epitaxial GaAs layer with ATLAS. According to the abrupt depletion aproximation, the depletion region extends to a depth...
http://nanohub.org/answers/question/1743

How to define source and drain region for 3D cylindrical VNAND flash memory cell structure
Closed  Responses: 0
Hi,
Can anybody help me in creating source/drain region if I want to create a 3D cylindrical SONOS memory using Sentaurus Structure Editor? I can give more details based on your...
http://nanohub.org/answers/question/1624

Ozgur Polat
http://nanohub.org/members/104542

Tapas Kumar Maiti
Dr. Tapas Kumar Maiti obtained his Master of Science degree with a Gold Medal in Physics from Vidyasagar University, India, 2005. In Nov. 2005, he joined Microelectronics Centre, Dept of...
http://nanohub.org/members/89493

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
http://nanohub.org/resources/18763

Simulation time
Closed  Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 1530’. Did I miss something ?
http://nanohub.org/answers/question/1103

Manual for Archimedes, the GNU Monte Carlo simulator
25 Jun 2012  Teaching Materials  Contributor(s): Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.
Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has...
http://nanohub.org/resources/14341

Can any one please suggest me a good tutorial for learning about asymmetric mosfets ?
Closed  Responses: 0
I am doing a final year project where in I am expected to come up with a solution to the present problems of a MOSFET through asymmetry, but I cant find anything productive please...
http://nanohub.org/answers/question/962

how can I use this program
Closed  Responses: 0
how can I use this program, I could not understand it, I hope there is someone especiallist in nanoelectronics (SNWFET)can help, with detailed. thanks
http://nanohub.org/answers/question/821

TCAD silvaco questions
Closed  Responses: 2
I am in need to help me in my project which entitled “Study and Simulation of Electrical Properties of organic photovoltaic cells based on novel polymers (πconjugated)” by Silvaco...
http://nanohub.org/answers/question/817

Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010  Online Presentations  Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
http://nanohub.org/resources/9272

Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008  Online Presentations  Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
http://nanohub.org/resources/5448

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
08 Aug 2008  Tools  Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education
http://nanohub.org/resources/abacus

BJT Lab
20 Mar 2008  Tools  Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
http://nanohub.org/resources/bjt

Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007  Online Presentations  Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
http://nanohub.org/resources/3633

TCAD Revisited, 2007: An Engineer’s Point of View
19 Dec 2007  Online Presentations  Contributor(s): Constantin Bulucea
This presentation was one of 13 presentations in the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
http://nanohub.org/resources/3638

Simulating with PETE: Purdue Exploratory Technology Evaluator
25 Sep 2007  Online Presentations  Contributor(s): Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms...
http://nanohub.org/resources/3263

tsuprem4
30 Apr 2007  Tools  Contributor(s): Steven Clark
TSUPREM4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.
http://nanohub.org/resources/tsuprem4

Vidur Vidur
http://nanohub.org/members/20084

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930