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Can any one please suggest me a good tutorial for learning about asymmetric mosfets ?
Closed | Responses: 0
I am doing a final year project where in I am expected to come up with a solution to the present problems of a MOSFET through asymmetry, but I cant find anything productive please...
how can I use this program
how can I use this program, I could not understand it, I hope there is someone especiallist in nanoelectronics (SNW-FET)can help, with detailed. thanks
How to define source and drain region for 3D cylindrical VNAND flash memory cell structure
Closed | Responses: 1
Can anybody help me in creating source/drain region if I want to create a 3D cylindrical SONOS memory using Sentaurus Structure Editor? I can give more details based on your...
Simulation of surface depletion in GaAs
I have some problems when simulating the surface depletion in an epitaxial GaAs layer with ATLAS. According to the abrupt depletion aproximation, the depletion region extends to a depth...
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?
TCAD silvaco questions
Closed | Responses: 2
I am in need to help me in my project which entitled “Study and Simulation of Electrical Properties of organic photovoltaic cells based on novel polymers (π-conjugated)” by Silvaco...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
06 Feb 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Computational Modeling: Experience from my Bell Lab Days
out of 5 stars
19 Dec 2007 | | Contributor(s):: Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
IWCE 2004 Held at Purdue
24 Oct 2004 |
IEEE and NCN sponsored the 10th International Workshop of Computational Electronics at Purdue, October 24-27, with the theme "The field of Computational Electronics - Looking back and looking ahead."
Manual for Archimedes, the GNU Monte Carlo simulator
23 Jun 2012 | | Contributor(s):: Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has been created by Jean Michel D. Sellier who is, since then, the leader of the project and the main...
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | | Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
07 Jul 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...
Nanoscale MOSFETS: Physics, Simulation and Design
27 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Simulating with PETE: Purdue Exploratory Technology Evaluator
25 Sep 2007 | | Contributor(s):: Arijit Raychowdhury
Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain,...
Tapas Kumar Maiti
TCAD Code for Simulation of Single and Dual Active Layer Oxide TFTs
19 Apr 2017 | | Contributor(s):: Kevin Stewart
Silvaco ATLAS 2D device simulation software was used to simulate single and dual active layer oxide TFTs. The input files for two cases are attached: 30 nm IGZO TFT 3/27 nm ITO/IGZO TFT
TCAD Files For Simulation Of Boron Indium Oxide Thin Film Transistors
09 Feb 2017 | | Contributor(s):: Kevin Stewart
Silvaco ATLAS 2D device simulation software was used to simulate BIO TFTs. The input files for two cases are attached: Simulation of device annealed at 200 °C Simulation of device annealed at 400 °C