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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
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Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
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Inter-band Tunnel Transistors: Opportunities and Challenges
30 Oct 2015 | | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
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Design and simulation of GaSb/InAs 2D Transmission enhanced TFET
10 Oct 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...