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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | Online Presentations | Contributor(s): Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
A UCSD analytic TFET model
18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | Online Presentations | Contributor(s): Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however,...
Bhagwan Ram Raad
Design and simulation of GaSb/InAs 2D Transmission enhanced TFET
10 Oct 2015 | Online Presentations | Contributor(s): Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Inter-band Tunnel Transistors: Opportunities and Challenges
30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
Is screening length in tunneling probability equation actually the tunneling barrier length?
Closed | Responses: 0
Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...
MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Compact Models | Contributor(s):
By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1
1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)
We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface...
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Praveen C S
Tunnel FET Learning Tutorial
05 Mar 2014 | Presentation Materials | Contributor(s): Mark Cheung
This module covers:
Field-effect transistor (FET) review,
Motivation for TFET,
Device design and simulation,
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Universal TFET model
23 Jan 2015 | Compact Models | Contributor(s):
By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1
1. University of Notre Dame 2. Norwegian University of Science and Technology
A universal TFET compact model implemented in verilog-A