Tags: TFET

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  1. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

    01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

    IWCE 2015 presentation.

  2. A UCSD analytic TFET model

    18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

  3. Achintya Priydarshi


  4. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

    22 Sep 2016 | | Contributor(s):: Jamie Teherani

    Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

  5. Bhagwan Ram Raad


  6. Bhupesh Bishnoi


  7. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    10 Oct 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  8. Gopinath S

    An research student


  9. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  10. Is screening length in tunneling probability equation actually the tunneling barrier length?

    Closed | Responses: 0

    Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...


  11. Junzhe Geng

    Junzhe Geng is a graduate student in professor Gerhard Klimeck’s research group at Purdue Unviersity. He obtained his Bachelor’s degree in electrical engineering from Purdue in 2010....


  12. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface...


  13. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  14. Notre Dame TFET Model

    25 Aug 2017 | Compact Models | Contributor(s):

    By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1

    1. University of Notre Dame 2. Norwegian University of Science and Technology

    Notre Dame TFET compact model version 2.1.0.


  15. Ozgur Polat


  16. Praveen C S



  17. raja j


  18. Siratun Nabi Sirat


  19. Trevin Gandhi


  20. Tunnel FET Learning Tutorial

    05 Mar 2014 | | Contributor(s):: Mark Cheung

    This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results