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A UCSD analytic TFET model
18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | Online Presentations | Contributor(s): Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however,...
Bhagwan Ram Raad
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Praveen C S
Tunnel FET Learning Tutorial
05 Mar 2014 | Presentation Materials | Contributor(s): Mark Cheung
This module covers:
Field-effect transistor (FET) review,
Motivation for TFET,
Device design and simulation,
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Universal TFET model
23 Jan 2015 | Compact Models | Contributor(s):
By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1
1. University of Notre Dame 2. Norwegian University of Science and Technology
A universal TFET compact model implemented in verilog-A