Tags: TFET

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  1. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

    01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

    IWCE 2015 presentation.

  2. A UCSD analytic TFET model

    18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

  3. Achintya Priydarshi

    http://nanohub.org/members/145038

  4. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

    22 Sep 2016 | | Contributor(s):: Jamie Teherani

    Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

  5. Bhagwan Ram Raad

    http://nanohub.org/members/147680

  6. Bhupesh Bishnoi

    http://nanohub.org/members/62512

  7. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    10 Oct 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  8. Gopinath S

    An research student

    http://nanohub.org/members/100640

  9. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  10. Is screening length in tunneling probability equation actually the tunneling barrier length?

    Closed | Responses: 2

    Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...

    http://nanohub.org/answers/question/1858

  11. Junzhe Geng

    Junzhe Geng is a graduate student in professor Gerhard Klimeck’s research group at Purdue Unviersity. He obtained his Bachelor’s degree in electrical engineering from Purdue in 2010....

    http://nanohub.org/members/35479

  12. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...

    http://nanohub.org/publications/181/?v=1

  13. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  14. Notre Dame TFET Model

    25 Aug 2017 | Compact Models | Contributor(s):

    By Hao Lu1, Trond Ytterdal2, Alan Seabaugh1

    1. University of Notre Dame 2. Norwegian University of Science and Technology

    Notre Dame TFET compact model version 2.1.0.

    http://nanohub.org/publications/195/?v=1

  15. Ozgur Polat

    http://nanohub.org/members/104542

  16. Praveen C S

    https://www.linkedin.com/profile/view?id=154256162&trk=nav_responsive_tab_profile

    http://nanohub.org/members/109012

  17. raja j

    http://nanohub.org/members/113606

  18. Siratun Nabi Sirat

    http://nanohub.org/members/186995

  19. Trevin Gandhi

    http://nanohub.org/members/72030

  20. Tunnel FET Learning Tutorial

    05 Mar 2014 | | Contributor(s):: Mark Cheung

    This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results