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Illinois ECE 598EP Hot Chips: Atoms to Heat Sinks
out of 5 stars
27 Jan 2009 | | Contributor(s):: Eric Pop
This course pursues a parallel treatment of electrical and thermal issues in modern nanoelectronics, from fundamentals to system-level issues. Topics include energy transfer through electrons and phonons, mobility and thermal conductivity, power dissipation in modern devices (CMOS, phase-change...
Illinois ECE 598EP Lecture 1 - Hot Chips: Atoms to Heat Sinks
29 Jan 2009 | | Contributor(s):: Eric Pop
IntroductionContent: The Big Picture Another CPU without a Heat Sink Thermal Management Methods Impact on People and Environment Packaging cost IBM S/390 refrigeration and processor packaging Intel Itanium and Pentium 4packaging Graphics Cards Under/Overclocking Environment A More Detailed Look...
Illinois ECE 598EP Lecture 12 - Hot Chips: Boundary Resistance and Thermometry
10 Jul 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Boundary Resistance and ThermometryTopics: Summary of Boundary Resistance Acoustic vs. Diffuse Mismatch Model Band to Band Tunneling Conduction Thermionic and Field Emission(3D) Photon Radiation Limit Photon Conductance of Nanoconstrictions Nanoscale Thermometry Scanning Thermal Microscopy
Illinois ECE 598EP Lecture 3.1 - Hot Chips: Electrons and Phonons
11 Feb 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Electrons and Phonons
Illinois ECE 598EP Lecture 3.2 - Hot Chips: Electrons and Phonons
17 Feb 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Illinois ECE 598EP Lecture 3.3 - Hot Chips: Electrons and Phonons
27 Feb 2009 | | Contributor(s):: Eric Pop
Electrons and PhononsTopics: Energy Stored in These Vibrations The Einstein Model Einstein Low-T and High-T Behavior The Debye Model Peter Debye (1884-1966) Website Reminder The Debye Integral Debye Low-T and High-T BehaviorThese notes were breezed and uploaded by Omar Sobh
Is dual gate device structure better from a thermal perspective?
01 Sep 2008 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons....
Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
08 Aug 2009 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...
Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions