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On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
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02 Feb 2012 | Publications | Contributor(s): Brian Demczyk
Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surface energies of the deposit and the substrate …
InAlAs growth method
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Does anyone have a good idea of the approximate conditions for InAlAs thin film (
I am a graduate research assistant at the University of Michigan- Ann Arbor, working in the Millunchick group. My research exams ion irradiation effects on III-V semiconductor film growth, ion beam …
Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)
07 Oct 2011 | Publications | Contributor(s): Brian Demczyk
Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.
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