Tags: thin film growth

Resources (1-2 of 2)

  1. On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films

    02 Feb 2012 | Papers | Contributor(s): Brian Demczyk

    Utilizing a model adapted from classical nucleation theory [8], we calculate a "critical thickness" for island formation, taking into account the surface energies of the deposit and the substrate...


  2. Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

    07 Oct 2011 | Papers | Contributor(s): Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao

    Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.