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InAlAs growth method
Closed | Responses: 0
Does anyone have a good idea of the approximate conditions for InAlAs thin film (< 50 nm) growth by MBE? ...
Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)
07 Oct 2011 | Papers | Contributor(s): Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao
Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.
María del Carmen Ley Flores
On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
02 Feb 2012 | Papers | Contributor(s): Brian Demczyk
Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surface
energies of the deposit and the substrate...